Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A study on ZrN layer as a diffusion barrier between Cu and Si

Cu와 Si 사이에서 확산방지막으로 사용하기 위한 ZrN 층의 연구

  • 김창조 (호서대학교 재료공학과) ;
  • 김좌연 (호서대학교 재료공학과) ;
  • 윤의중 (호서대 전기전자제어공학부) ;
  • 이재갑 (국민대학교 금속재료공학과)
  • Published : 1998.11.01
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Abstract

The properties of ZrN layer deposited by Sputtering system have been investigated in the application of diffusion barrier layer to copper. ZrN layer exhibited a excellent barrier property up to $700^{\circ}$ and higher resistivity. If an excess $O_2$is protected during the process of ZrN deposition, ZrN layer will be possible to use a diffusion barrier layer to copper.

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