Array Simulation Characteristics and TFT-LCD Pixel Design Optimization for Large Size, High Quality Display

대면적 고화질의 TFT-LCD 화소 설계 최적화 및 어레이 시뮬레이션 특성

  • 이영삼 (홍익대학교 전자전기공학부) ;
  • 윤영준 (홍익대학교 전자전기공학부) ;
  • 정순신 (홍익대학교 전자전기공학부) ;
  • 최종선 (홍익대학교 전자전기공학부)
  • Published : 1998.11.01

Abstract

An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate si후미 distortion and pixel charging capability. which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio and level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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