한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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DRAM 캐패시터 응용을 위한 STO 유전체 박막의 전기적인 특성

The electrical characteristics of STO dielectric thin films for application of DRAM capacitor.

  • 이우선 (조선대학교 전기공학과) ;
  • 오금곤 (조선대학교 전기공학과) ;
  • 김남오 (조선대학교 전기공학과) ;
  • 손경춘 (조선대학교 전기공학과) ;
  • 정창수 (조선대학교 전기공학과) ;
  • 정용호 (서강정보대학 열냉동과)
  • 발행 : 1998.11.01
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초록

The objective of this study is to deposited the preparation of STO dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.

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