Stability of High-Voltage Silicon P-I-N Switches

고압 실리콘 p-i-n 스위칭 소자의 안정도

  • Published : 1999.07.19

Abstract

The possible origins of instabilities observed in high-voltage p-i-n devices were investigated. It was concluded that the temporary changes of electrical characteristics may be due to the changes of the physical parameters of gold acceptor, while the permanent changes are due to process-related factors.

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