Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1999.07d
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- Pages.1956-1958
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- 1999
Variations of the hole injection efficiency with IGBT's collector structure
IGBT의 콜렉터 구조에 따른 홀 주입효율의 변화
- Choi, Byung-Sung (School of Electronics Engineering, Ajou University) ;
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Chung, Sang-Koo
(School of Electronics Engineering, Ajou University)
- Published : 1999.07.19
Abstract
The analysis of hole injection efficiency at the p+/n-drift layer junction in non-punchthrough IGBT structure is presented. This analysis takes into account carrier concentration variations by conductivity modulation. Good agreement between this analysis and simulation is found over a wide range of carrier lifetime and current density. The proposed analytical model of the hole injection efficiency as a function of collector width, collector concentration has been verified by device simulator, ATLAS.
Keywords