대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

하부전극 변화에 따른 PZT 박막 특성에 관한 연구

The effects of PZT thin film capacitor with various bottom electrode

  • 박영 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 정규원 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 임승혁 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 송준태 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Park, Young (School of electrical and computer engineering, Sungkyunkwan Univ.) ;
  • Chung, Kyu-Won (School of electrical and computer engineering, Sungkyunkwan Univ.) ;
  • Yim, Seung-Hyuk (School of electrical and computer engineering, Sungkyunkwan Univ.) ;
  • Song, Jun-Tae (School of electrical and computer engineering, Sungkyunkwan Univ.)
  • 발행 : 1999.07.19
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초록

Ferroelectric lead zirconate titanate(PZT) thin films were prepared on various bottom electrodes by rf magnetron sputtering methode. The structural phase and surface morphology of the PZT thin films were largely affected by the bottom electrodes. P-E curves of PZT thin films deposited on Pt. $RuO_2$ and Ru/$RuO_2$ bottom electrode showed typical P-E hysteresis loop. The measure values of $P_r,\;E_c$ of the Ru/PZT/Ru/$RuO_2$ capacitor were $16.9{\mu}C/Cm^2$, 140kV/ cm, respectively. The Ru/PZT/Ru/$RuO_2$ capacitors were fatigue free uP to nearly $10^9$ switching cycle but Pt/PZT/Pt capacitor showed 34% degradation uP to $10^9$ switching cycle.

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