Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Microstructure and Dielectric Properties of (Ba,Sr)TiO$_3$ Thin Film with Thickness

박막 두께에 따른 (Ba,Sr)TiO$_3$박막의 구조 및 유전특성

  • 이상철 (광운대학교 전자재료공학과) ;
  • 임성수 (광운대학교 전자재료공학과) ;
  • 정장호 (광운대학교 전자재료공학과) ;
  • 이성갑 (서남대학교 전자전기공학과) ;
  • 배선기 (인천대학교 전기공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 1999.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

The (Ba,Sr)TiO$_3$[BST] thin film were fabricated on the Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with deposition time and substrate temperature by XRD. In the case of the BST thin films which has the deposition thin of 20 min, second phases and BST (111) peaks were increased with increasing the temperature of substrate. The capacitance of the BST thin film (deposition time of 20 min.) was decreased with the substrate temperature and was 1500pF with applied voltage of 1V.

Keywords