Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A 900 MHz RF CMOS LNA using Q-enhancement cascode input stage

Q-증가형 캐스코드 입력단을 이용한 900 MHz RF CMOS 저 잡음 증폭기

  • 박수양 (청주대학교 대학원 전자공학과) ;
  • 전동환 (청주대학교 대학원 전자공학과) ;
  • 송한정 (충청대학교 전자공학과) ;
  • 손상희 (청주대학교 전자 · 정보통신 · 반도체공학부)
  • Published : 1999.11.01
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Abstract

A 900 71Hz RF band-pass amplifier for wireless communication systems is designed and fabricated. HSPICE simulation results show that the amplifier can achieve a tunable center frequency between 880 MHz and 920 MHz. The gain of designed amplifier is 19 dB at Q=88, and the power dissipation is about 61 mW under 3 V power supply by using the spiral inductor with negative-7m circuit and center frequency tunning circuit. The designed band-pass amplifier is implemented by using 0.6 um 2-poly-3-metal standard CMOS process.

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