Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Bi-sticking Coefficient of Bi-superconducting Thin Film Prepared by IBS Method

  • Lee, Hee-Kab (Department of Electrical & Electronic Eng., Dongshin University) ;
  • Lee, Joon-Ung (Department of Electrical & Electronic Eng., Dongshin University) ;
  • Park, Yong-Pil (Department of Electrical & Electronic Eng., Dongshin University)
  • Published : 1999.11.01
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Abstract

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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