Calculation of mobile charge density in ferroelectric films using TVS(Triangular Voltage

TVS법을 이용한 강유전체 박막내에서의 mobile charge밀도 산출

In this paper we applied TVS(Triangular Voltage Sweep) method to calculate the mobile ionic charge densities in some ferroelectric thin films. During the measurement, the temperature of specimens were maintained at 20$0^{\circ}C$. By this method, the amount of mobile ionic charge Q$_{m}$ and mobile ionic charge density N$_{m}$ of a MFIS structure were calculated 3.5 [pC] and about 4.3$\times$10$^{11}$ [ions/cm$^2$], respectively. In order to successful TVS measurement, the gate leakage current density of films must be low 10$^{-9}$ (A/cm$^2$) order.der.