Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Electrical Characteristics of the PLZT Thin Film Acorrding to Thickness for DRAM Capacitor

DRAM소자용 PLZT 박막의 두께에 따른 전기적 특성에 관한 연구

  • 박용범 (연세대학교 전기공학과) ;
  • 장낙원 (삼성전자 반도체연구소) ;
  • 마석범 (용인송담대학 전기설비과) ;
  • 김성구 (연세대학교 전기공학과) ;
  • 최형욱 (경원대학교 전기전자공학부)
  • Published : 1999.11.01
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Abstract

PLZT thin films on Pt/Ti/SiO$_2$/Si substrate were fabricated with different Thickness by pulsed laser deposition. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{t}$=985 at 5000$\AA$, and $\varepsilon$$_{t}$=668 at 2000A. P-EI hysteresis loop of 14/50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/70 PLZT thin film was 10$^{-8}$ A/$\textrm{cm}^2$ at 2000$\AA$.EX>.

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