A Study on the Characteristics of Se/Zns Thin Film Light Amplifiers

Se/Zns 박막 광증폭기의 특성에 관한 연구

  • Park, Gye-Choon (Department of Electrical Engineering, Mokpo National University) ;
  • Im, Young-Sham (Department of Electrical Engineering, Mokpo National University) ;
  • Lee, JIn (Department of Electrical Engineering, Mokpo National University) ;
  • Chung, Hae-Duck (Department of Electrical Engineering, Mokpo National University) ;
  • Gu, Hal-Bon (Department of Electrical Engineering, Chonnam National University) ;
  • Kim, Jong-Uk (Department of Electrical Engineering, Chonnam National University) ;
  • Jeong, In-Seong (Department of Electrical Engineering, Chonnam National University) ;
  • Jeong, Woon-Jo (Department of Inf. and Comm., Hanlyo Sanup University) ;
  • Lee, Ki-Sik (Department of Electrical Engineering, Dankuk University)
  • Published : 1999.11.01

Abstract

Using Se as a photoconductive element and ZnS as a luminescent element, a Se/ZnS thin film device for light amplifier applications was fabricated and its characteristics were investigated. The Se/ZnS thin film light amplifier was fabricated by evaporating the ZnS thin film on an ITO(Indium Tin Oxide) glass and the Se thin film on the ZnS thin film in sequence. The results of the characteristics investigation are summarized as follows: (1) When the frequency of an excitation voltage was increased, both the brightness response and the brightness saturation of the Se/ZnS thin film light amplifier began to start at a higher light input. (2) The gain of the Se/ZnS thin film light amplifier was dependent upon the amplitude and the frequency of the excitation voltage as well as an external light input. (3) When the Se/ZnS thin film light amplifier was excited by a direct current of a constant voltage, the frequency of the output brightness was\\`equal to the frequency of the input light applied. When the light amplifier was excited by a sinusoidal voltage of 60 Hz, the frequency of the output brightness was 120 Hz.

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