Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Silylation Photo Resist Process and the Enhanced-Inductively Coupled Plasma (E-ICP)

Silylation Photo resist 공정과 Enhanced-Inductively Coupled Plasma (E-ICP)

  • 정재성 (인하대학교 반도체 및 박막기술연구소) ;
  • 박세근 (인하대학교 반도체 및 박막기술연구소) ;
  • 오범환 (인하대학교 반도체 및 박막기술연구소)
  • Published : 1999.06.01
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Abstract

The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

Keywords