Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Electron Injection-induced Slow Current Transients in Metal-Oxide-Semiconductor Capacitors

금속-산화막-반도체(MOS) 소자에서의 전자주입에 따른 느린 준위의 전류 응답 특성 연구

  • 최성우 (성균관대학교 전기 전자 및 컴퓨터 공학부) ;
  • 전현구 (성균관대학교 전기 전자 및 컴퓨터 공학부) ;
  • 안병철 (성균관대학교 전기 전자 및 컴퓨터 공학부) ;
  • 노관종 (성균관대학교 전기 전자 및 컴퓨터 공학부) ;
  • 노용한 (성균관대학교 전기 전자 및 컴퓨터 공학부)
  • Published : 1999.11.01
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Abstract

A simple two-terminal cyclic current-voltage(I-V) technique is used to measure the current-transients in MOS capacitors. Distinct charging/discharging currents were measured and analyzed as a function of (1) the hold time. (2) the gate polarity during the FNT electron injection, (3) the injection fluence and (4) the annealing time after the injection had stopped. Discharging and charging current-transients were strongly dependent upon the conditions for forming the inversion layer and the density of interface traps caused during the FNT electron injection, respectively. Several tentative mechanisms were suggested in the current work.

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