Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Effect of Substrate Bias on the Performance of Programming and Erasing in p-Channel Flash Memory

기판 전압이 p-채널 플래쉬 메모리의 쓰기 및 소거 특성에 미치는 영향

  • 천종렬 (인천대학교 전자공학과) ;
  • 김한기 (인천대학교 전자공학과) ;
  • 장성준 (여주대학교 사무자동화학과) ;
  • 유종근 (인천대학교 전자공학과) ;
  • 박종태 (인천대학교 전자공학과)
  • Published : 1999.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

The effects of the substrate bias on the performance of programming erasing in p-channel flash memory cell have been investigated. It is found that applying positive substrate bias can improve the programming and erasing speed. This improvements can be explained by Substrate Current Induced Hot Electron Injection. From the results, we can confirm that BTB programming method is better in programming and erasing speed than CHE programming method.

Keywords