대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

CVD 에 의한 대면적 실리콘기판위에서 수직방향으로 정렬된 탄소나노튜브의 성장

Growth of vertically aligned carbon nanotubes on a large area silicon substrates by chemical vapor deposition

  • 이철진 (군산대학교 전기전자제어공학부) ;
  • 박정훈 (군산대학교 전기전자제어공학부) ;
  • 손권희 (군산대학교 전기전자제어공학부) ;
  • 김대운 (군산대학교 전기전자제어공학부) ;
  • 이태재 (군산대학교 전기전자제어공학부) ;
  • 류승철 (군산대학교 전기전자제어공학부)
  • Lee, Cheol-Jin (School of Electrical Engineering, Kunsan National University) ;
  • Park, Jeong-Hoon (School of Electrical Engineering, Kunsan National University) ;
  • Son, Kwon-Hee (School of Electrical Engineering, Kunsan National University) ;
  • Kim, Dae-Woon (School of Electrical Engineering, Kunsan National University) ;
  • Lee, Tae-Jae (School of Electrical Engineering, Kunsan National University) ;
  • Lyu, Seung-Chul (School of Electrical Engineering, Kunsan National University)
  • 발행 : 1999.11.20
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초록

we have grown vertically aligned carbon nanotubes on a large area of Co-Ni codeposited Si substrates by thermal chemical vapor deposition using $C_{2}H_{2}$ gas. The carbon nanotubes grown by the thermal chemical vapor deposition are multi-wall structure, and the wall solace of nanotubes is covered with defective carbons or carbonaceous particles. The carbon nanotubes range from 50 to 120nm in diameter and about $130{\mu}m$ in length at $950^{\circ}C$. The turn-on voltage was about $0.8V/{\mu}m$ with a current density of $0.1{\mu}A/cm^2$ and emission current reveals the Fowler-Nordheim mode.

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