저압력에서의 다이아몬드 함성

Synthesis of diamond at low pressure

The particles were deposited on silicon wafers at low pressure:1[torr] from $CH_4-H_2$ mixed gas by using RF plasma CVD, and were investigated by SEM and Raman spectroscopy. The results are as following; Diamond particles were synthesized under $CH_4/H_2$ concentration of 1[%], however amorphous cabon particles were synthesized over $CH_4/H_2$ concentration of 2[%]. Growth rate of diamond particle was 2.2 times: $0.8[{\mu}m/h]$ as much as that synthesized at 25[torr].