글로벌 모델에 의한 저온 고밀도 플루오로카본 플라즈마 특성의 공정변수 의존성 해석

Analysis of Process Parameter dependency on the characteristics of high density fluoro carbon plasma using global model

Radical and ion densities in a CF4 plasma have been calculated as a function of input power density. 9as pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and CF+ become dominant neutral and ionic radical at the high power condition. As the pressure increases. ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of CF4 feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of CF4 monotonically decreases with flow rate. which results in increase in CF3 and decrease in CF density. The calculation results show that the SiO2 etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.