대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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ICP-CVD로 성장된 SiC박막의 Ni 금속 접합과 Ni/SiC Schottky diode의 특성 분석

Characteristics of Ni metallization on ICP-CVD SiG thin film and Ni/SiC Schottky diode

  • 길태현 (명지대학교 전기정보제어공학부) ;
  • 김용상 (명지대학교 전기정보제어공학부)
  • Gil, Tae-Hyun (Myongji University, School of Electrical and Information Control Engineering) ;
  • Kim, Yong-Sang (Myongji University, School of Electrical and Information Control Engineering)
  • 발행 : 1999.11.20
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초록

We have fabricated SiC Schottky diode for high temperature applications. SiC thin film for drift region has been deposited by ICP-CVD. In order to establish metallization conditions, we have extracted the device parameters of the Schottky diode from the forward I-V characteristics and the C-V characteristics as a function of temperature. The ideality factor was varied from 2.07 to 1.15 and the barrier height was also varied from 1.26eV to 1.92eV with increase of temperature. The reverse blocking voltage was 183 V.

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