$SrTiO_3$ 바리스터의 유전특성

Dielectric Properties of $SrTiO_3$-based varistors

  • 발행 : 2000.07.17

초록

In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data were conducted. As the result it was showed that the equivalent circuit model considered the gram-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the varistor-voltages and the nonlinear coefficient of varistors. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.

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