펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과 연구

Effect of annealing of Pb(La,Ti)$O_3$ thin films by Pulsed laser deposition process

  • 허창회 (연세대학교 전기컴퓨터공학과) ;
  • 심경석 (연세대학교 전기컴퓨터공학과) ;
  • 이상렬 (연세대학교 전기컴퓨터공학과)
  • Hur, Chang-Hoi (Department of Electrical and Computer Engineering, Yonsei University) ;
  • Shim, Kyung-Suk (Department of Electrical and Computer Engineering, Yonsei University) ;
  • Lee, Sang-Yeol (Department of Electrical and Computer Engineering, Yonsei University)
  • 발행 : 2000.07.17

초록

Dielectric thin films of PLT(Pb(La.Ti)O3) for the application of highly integrated memory devices have been deposited on Pt/Ti/SiO2/Si substrates in situ by pulsed laser deposition(PLD). We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. Both in-situ annealing and ex-situ annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)$O_3$ films.

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