대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

전자 디바이스용 다이아몬드 박막의 제조 및 결정성장 특성

Preparation of Diamond Thin film for Electric Device and Crystalline Growth

  • 김규식 (충북대학교 공업화학과) ;
  • 박수길 (충북대학교 공업화학과) ;
  • 손원근 (충남대학교 고분자 공학과) ;
  • Kim, Gru-Sik (Department of Industrial Chemical Engineering, Chungbuk Nat'1 Univ.) ;
  • Park, Soo-Gil (Department of Industrial Chemical Engineering, Chungbuk Nat'1 Univ.) ;
  • Son, Won-Keun (Department of Polymer Science Engineering, Chungnam Nat'1 Univ.) ;
  • Fujishiama, Akira (Department of Applied Chemistry, School of Engineering, The University of Tokyo)
  • Published : 2000.07.17
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

Abstract

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

Keywords