Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Birefringence of the chalcogenide As-Ge-Se-S thin films by the electric field effects

전계효과에 의한 비정질 칼코게나이드 박막에서의 복굴절 특성

  • Son, Chul-Ho (Dept. of Electronic Materials Eng. Kwangwoon University) ;
  • Jang, Sun-Joo (Dept. of Electronic Materials Eng. Kwangwoon University) ;
  • Yeo, Cheoi-Ho (Dept. of Electronic Materials Eng. Kwangwoon University) ;
  • Park, Jung-I1 (Dept. of Electronic Materials Eng. Kwangwoon University) ;
  • Lee, Young-Jong (Dept. of Electronic Yeojoo college) ;
  • Chung, Hong-Bay (Dept. of Electronic Materials Eng. Kwangwoon University)
  • 손철호 (광운대학교 공과대학 전자재료공학과) ;
  • 장선주 (광운대학교 공과대학 전자재료공학과) ;
  • 여철호 (광운대학교 공과대학 전자재료공학과) ;
  • 박정일 (광운대학교 공과대학 전자재료공학과) ;
  • 이영종 (여주대학 전자과) ;
  • 정홍배 (광운대학교 공과대학 전자재료공학과)
  • Published : 2000.07.17
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Abstract

We has investigated the birefringence by the assisted electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Photoinduced birefringence has been studied in a chalcogenide material. We induced this thin films using linearly polarized He-Ne laser light(633nm) and detected polarized semiconductor laser light(780nm). To investigate the effect of electric field, various bias voltages applied. The result is shown that the birefringence has a higher value in +2V than others. We obtained the birefringence in the electric field effects by various voltages.

Keywords