Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A study on the Etching and electrical Properties of PZT Thin Films

PZT(53/47) 박막의 식각 및 전기적 특성에 관한 연구

  • 김경태 (중앙대학교 전기전자공학부) ;
  • 이성갑 (서남대학교 전기전자공학부) ;
  • 이영희 (광운대학교 전자재료공학과) ;
  • 김창일 (중앙대학교 전기전자공학부)
  • Published : 2000.07.01
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Abstract

The effect of excess Pb contents on the etching of PZT thin films and their electrical properties has been investigated. Ferroelectric PZT(53/47) thin films were prepared by the metal alkoxide-based Sol-Gel method, in which they were spin-coating on P7Ti/Si02/Si substrate using the PZT(53/47) stock solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar/Cl$_2$/BCl$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$.

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