Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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ATO Thin Films Prepared by Reactive lout Beam Sputtering

반응성 이온빔 스퍼터링법에 의해 제조된 ATO박막

  • 구창영 (영남대학교 재료금속공학부) ;
  • 김경중 (한국표준과학연구원 표면분석그룹) ;
  • 김광호 (부산대학교 무기재료공학과) ;
  • 이희영 (영남대학교 재료금속공학부)
  • Published : 2000.07.01
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Abstract

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by reactive ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to 1500 $\AA$ or 2000$\AA$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from 40$0^{\circ}C$ to 80$0^{\circ}C$ in flowing $O_2$or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

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