Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of SDB SOI structure with sealed cavity

Cavity를 갖는 SDB SOI 구조의 제작

  • 강경두 (부경대학교 전자공학과) ;
  • 정수태 (부경대학교 전자공학과) ;
  • 주병권 (한국과학기술연구원 정보재료 ·소자 연구센터) ;
  • 정재훈 (동서대학교 정보통신공학부) ;
  • 정귀상 (동서대학교 정보통신공학부)
  • Published : 2000.07.01
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Abstract

Combination of SDB(Si-wafer Direct Bonding) and electrochemical etch-stop in TMAH anisotropic etchant can be used to create a variety of MEMS(Micro Electro Mechanical System). Especially, fabrication of SDB SOI structures using electrochemical etch-stop is accurate method to fabrication of 3D(three-dimensional) microstructures. This paper describes on the fabrication of SDB SOI structures with sealed cavity for MEMS applications and thickness control of active layer on the SDB SOI structure by electrochemical etch-stop. The flatness of fabricated SDB SOI structure is very uniform and can be improved by addition of TMAH to IPA and pyrazine.

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