Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Oxide etching characteristics and Etched Profiles by the Enhanced Inductive Coupled Plasma

산화막 식각에 적용된 E-ICP효과와 형상단면비교

  • 조수범 (인하대학교 전자 전기 컴퓨터공학부 반도체 전공) ;
  • 송호영 (인하대학교 전자 전기 컴퓨터공학부 반도체 전공) ;
  • 박세근 (인하대학교 전자 전기 컴퓨터공학부 반도체 전공) ;
  • 오범환 (인하대학교 전자 전기 컴퓨터공학부 반도체 전공)
  • Published : 2000.07.01
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Abstract

The etch rate of $SiO_2$ in Enhanced - Inductive Coupled Plasma (E-ICP) and CW-ICP systems are investigated. As addition of $O_2$ to $CF_4$ gas increases oxide etch rate, E-ICP etching shows the highest etch rate (about 6000A) at an optimized condition with 30% $O_2$ in $CF_4$ 70Hz at the modulation frequency of 70Hz. E-ICP also shows better etch profile than CW-ICP.

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