Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

RF Power dependence in $YMnO_3$/Si(100) Structures

$YMnO_3$/Si(100) 구조의 RF Power 의존성

  • 김진규 (청주대학교 일반대학원 전자공학과) ;
  • 정순원 (청주대학교 일반대학원 전자공학과) ;
  • 김용성 (청주대학교 일반대학원 전자공학과) ;
  • 이남열 (청주대학교 일반대학원 전자공학과) ;
  • 정상현 (청주대학교 일반대학원 전자공학과) ;
  • 김광호 (청주대학교 전자·정보통신·반도체 공학부) ;
  • 유병곤 (한국전자통신연구원) ;
  • 이원재 (한국전자통신연구원) ;
  • 유인규 (한국전자통신연구원)
  • Published : 2000.07.01
Download PDF
⟨ Previous Next ⟩

Abstract

YMnO$_3$films have been deposited with different Rf powers of 60W, 80W, 100W, and 120W. The structural properties of YMnO$_3$films on Si(100) were analysed by XRD(X-ray diffraction). The c-axis oriented peaks of YMnO$_3$were observed deposited in YMnO$_3$/Si(100) structure of RF power at 87$0^{\circ}C$ in oxygen ambient, and the peaks were enlarged by increasing The RF powers. The dielectric constant of the film deposited at 100W and 120W of RF power were about 19, 20 respectively.

Keywords