Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Characteristics of InP-Waveguide

InP 광도파로의 식각 특성

  • 박순룡 (인하대학교 전자재료 공학과) ;
  • 김진우 (인하대학교 전자재료 공학과) ;
  • 오범환 (인하대학교 전자재료 공학과) ;
  • 우덕하 (한국과학기술연구원 광기술 연구센터) ;
  • 김선호 (한국과학기술연구원 광기술 연구센터)
  • Published : 2000.07.01
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Abstract

Fabrication of InP-based photonic devices by dry etch Process is important for clear formation of waveguide mesa structure. We have developed more efficient etch process of the inductively coupled plasma (ICP) with low damages and less polymeric deposits for the InP-based photonic devices than the reactive ion etching (RIE) technique. We report the tendency of etch rate variation by the process parameters of the RF power, pressure, gas flow rate, and the gas mixing ratio. The surface roughness of InP-based waveguide structure was more improved by the light wet etching in the mixed solution of H$_2$SO$_4$:H$_2$O (1:1)

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