Proceedings of the Korean Institute of Navigation and Port Research Conference (한국항해항만학회:학술대회논문집)

Korean Institute of Navigation and Port Research (한국항해항만학회)
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Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition

  • Yang, Sung-Ho (Department of Electrical & Electronic Eng., Dongshin University) ;
  • Park, Yong-Pil (Department of Electrical & Electronic Eng., Dongshin University) ;
  • Jang, Kyung-Uk (Dept. of Automotive Maintenance, Kyungwon College) ;
  • Oh, Geum-Gon (Department of Electrical Eng., Chosun University) ;
  • Lee, Joon-Ung (President of KIEEME)
  • Published : 2000.11.01
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Abstract

Si$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

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