Proceedings of the International Microelectronics And Packaging Society Conference (한국마이크로전자및패키징학회:학술대회논문집)
- 2000.04a
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- Pages.97-102
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- 2000
Etching Characteristics of Fine Ta Patterns with Electron Cyclotron Resonance Chlorine Plasma
- Kim, Sang-Hoon (Department of Materials Engineering, Hanyang University) ;
- Woo, Sang-Gyun (Department of Materials Engineering, Hanyang University) ;
- Ahn, Jin-Ho (Department of Materials Engineering, Hanyang University)
- Published : 2000.04.01
Abstract
We have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the goWe have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the good etch profile preventing the microloading effect.od etch profile preventing the microloading effect.
Keywords