Proceedings of the Korean Magnestics Society Conference (한국자기학회:학술대회 개요집)

  • 2000.09a
  • /
  • Pages.325-326
  • /
  • 2000
  • /
  • 2233-9485(pISSN)
  • /
  • 2233-9574(eISSN)
The Korean Magnetics Society (한국자기학회)
권호 표지

Low Temperature Properties of Exchange-biased Magnetic Tunnel Junction

  • Lee, K. I. (Kwangwoon University) ;
  • J. G. Ha (Kwangwoon University) ;
  • S. Y. Bae ;
  • K. H. Shin (Korea Institute of Science and Technology)
  • Published : 2000.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

Low temperature diagnosis was performed as a probe for the integrity of MTJ(Magnetic tunnel junction) process which is optimised for the given plasma oxidation condition. TMR ratio increased slowly with decreasing temperature than that expected from spin wave exitation theory〔1〕. Junction resistance (RJ) does not follow T$\^$-$\frac{1}{2}$/ law below 200 K, indicating another conduction path besides spin polarized tunneling is involved at low temperature. Temperature dependence of conductance dip and bias dependence of TMR with temperature are discussed, from which the quality of tunnel barrier and its formation process can be inferred.

Keywords