대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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- Pages.16-19
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- 2000
Compound Source MBE를 이용한 InGaP/InGaAs p-HEMT 구조의 성장 및 특성 분석
Growth and Characterization of InGaP/InGaAs p-HEMI Using Compound Source MBE
- Kim, J.H. (Dept. of Information and Communications Kwang-Ju Institute of Science and Technology) ;
- S.J. Kang (Dept. of Information and Communications Kwang-Ju Institute of Science and Technology) ;
- S.J. Jo (Dept. of Information and Communications Kwang-Ju Institute of Science and Technology) ;
- J.D. Song (Dept. of Information and Communications Kwang-Ju Institute of Science and Technology) ;
- Lee, Y.T. (Dept. of Information and Communications Kwang-Ju Institute of Science and Technology) ;
- J.I. Song (Dept. of Information and Communications Kwang-Ju Institute of Science and Technology)
- Published : 2000.06.01
Abstract
DC and low frequency noise characteristics of InGaP/InGaAs pseudomorphic HEMTs (p-HEMTs) grown by compound source MBE are investigated for temperature range of 150K to 370K. Equivalent input noise spectra(
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