RTA Post-annealing Effect on Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization

금속 유도 측면 결정화를 이용한 박막 트랜지스터의 RTA 후속열처리 효과

Thin Film Transistor(TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature(500$^{\circ}C$) Metal-Induced Lateral Crystallization(MILC) furnace annealing and high -temperature (700$^{\circ}C$) rapid thermal annealing leads to the improvement of the material quality The TFTs measured with this two-step annealing material exhibit better characteristics than those obtained by using conventional MILC furnace annealing.