Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical properties of PZT thin films deposited on corning glass substrates

Corning glass 기판위에 증착된 PZT 박막의 전기적 특성

  • 주필연 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 정규원 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 박영 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 김홍주 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 박기엽 (부산정보대 전기공학부) ;
  • 송준태 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 2000.11.01
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Abstract

Effects of excess Pb(50 mole ％) on the crystallization properties of amorphous PZT thin films on the glass substrates by post-annealing in oxygen ambient were investigated to lower the crystallization temperature of the PZT thin films with a single perovskite phase. The PZT thin films(350nm) were prepared on Pt/Ti/corning glass(1737) substrates. The PZT thin films and bottom electrode were deposited by RF magnetron sputtering. Crystallization properties of PZT thin films were strongly dependent on RTA(Rapid Thermal Annealing) temperature. We were able to obtain a perovskite structure of PZT at 600$^{\circ}C$ for 10min. After thermal treatments were done, electrical properties such as I-V, P-E, and fatigue were measured.

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