Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

A study on SOI structures thinning by electrochemical etch-stop

전기화학적 식각정지에 의한 SOI 박막화에 관한 연구

  • 강경두 (부경대학교 전자공학과) ;
  • 정수태 (부경대학교 전자공학과) ;
  • 류지구 (부경대학교 전자공학과) ;
  • 정재훈 (동서대학교 정보통신공학부) ;
  • 정귀상 (동서대학교 정보통신공학부)
  • Published : 2000.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

The non-selective method by polishing after grinding was used widely to thinning of SDB SOI structures. This method was very difficult to thickness control of thin film, and it was dependent on equipments. However electrochemical etch-stop, one of the selective methods, was able to accurately thickness control and etch equipment was very simple. Therefore, this paper described with the effect of leakage current and electrodes on electrochemical etch-stop. Consequentially, PP(passivation potential) was changed according to the kinds of contact and contact sizes, but OCP(open current potential) was not change with range of -1.5~-1.3V

Keywords