한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Oxidation Kinetics of Silicon by Inductively Coupled Oxygen Plasma

  • Choi, Yong-Woo (Department of Materials Science and Engineering, KAIST) ;
  • Ahn, Jin-Hyung (Department of Materials Science and Engineering, KAIST) ;
  • Kim, Sung-Chul (Department of Materials Science and Engineering, KAIST) ;
  • Ahn, Byung-Tae (Department of Materials Science and Engineering, KAIST)
  • Published : 2000.01.13
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Abstract

The low-temperature Si oxidation kinetics by inductively coupled oxygen plasma has been studied. Linear rate constants had negative values when the oxide growth rate was described by linear-parabolic growth law. The analysis of transverse-optical mode frequencies and etch rates indicated that the density of surface oxide was lower than that of bulk oxide. The oxidation kinetics could be explained qualitatively by assuming a surface layer with larger diffusion coefficient and a bulk layer with smaller diffusion coefficient.

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