한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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A Study of Etch Characteristics of ITO Thin Film using the Plasma Diagnostic Tools

  • Park, J.Y. (Department of Materials Engineering, Sungkyunkwan University) ;
  • Lee, D.H. (Department of Materials Engineering, Sungkyunkwan University) ;
  • Jeong, C.H. (Department of Materials Engineering, Sungkyunkwan University) ;
  • Kim, H.S. (Department of Materials Engineering, Sungkyunkwan University) ;
  • Kwon, K.H. (Department of Electronic Engineering, Hanseo University) ;
  • Yeom, G.Y. (Department of Materials Engineering, Sungkyunkwan University)
  • 발행 : 2000.01.13
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초록

In this study, high-density plasma etching characteristics of ITO(indium tin oxide) films used for transparent electrodes in display devices have been investigated. The etch characteristics of ITO as a function of $Ar/CH_4$ gas mixtures were analyzed using QMS(quadrupole mass spectrometry), OES(optical emission spectroscopy), and ESP(electrostatic probe). ITO etch rates were increased with the addition of moderate amount of $CH_4$ to Ar due to the increased chemical reaction between $CH_3$ or H and ITO in addition to the physical sputtering of ITO by Ar ion bombardment. However, the addition of excess amount of $CH_4$ decreased the ITO etch rates possibly due to the increased polymer formation on the ITO surface. Also, the measurement data obtained by QMS and OES suggested that $CH_3$ radicals are more activity involved in the etching of ITO compared to H radicals.

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