Influence of vacuum annealing on the secondary electron emission coefficient(${\gamma}$) from a MgO protective layer

The secondary electron emission coefficient(${\gamma}$) of vacuum annealed MgO films has been investigated by ${\gamma}-focused$ ion beam(${\gamma}-FIB$) system. The vacuum annealed MgO films have been found to have higher ${\gamma}$ values from 0.053 up to 0.121 than those for as-deposited MgO films from 0.026 up to 0.062 for $Ne^+$ ion energies ranged from 50eV to 200eV. Also it is found that ${\gamma}$ for air hold of vacuum annealed MgO layers for 24-hours is similar to that for vacuum annealed MgO films without any air-hold.