한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Silicon field emission arrays coated with a $CoSi_2$ layer grown by reactive chemical vapor deposition

  • Han, Byung-Wook (Department of Materials Science and Engineering, KAIST) ;
  • Rhee, Hwa-Sung (Department of Materials Science and Engineering, KAIST) ;
  • Ahn, Byung-Tae (Department of Materials Science and Engineering, KAIST) ;
  • Lee, Nam-Yang (Information Display Research Institute, Orion Electric Co.)
  • 발행 : 2000.01.13
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초록

We prepared Si emitters coated with a MOCVD $CoSi_2$ layer to improve the emission properties. The $CoSi_2$ layer was grown on Si field emitters in situ by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt at 600 ${\sim}$ $650^{\circ}C$. The $CoSi_2$ coated field emitters showed enhanced emission properties of current-voltage characteristics, which were due to the increase of emitting area from Fowler-Nordheim plot. And the emission current fluctuation decreased due to the chemically stable surface properties of $CoSi_2$.

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