한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Immunity Improvement of Mo Silicidized a-Si FEA to Vacuum Environments

  • Shim, Byung-Chang (Inter-University Semiconductor Research Center(ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research Center(ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center(ISRC) and School of Electrical Engineering, Seoul National University)
  • 발행 : 2000.01.13
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초록

In order to improve electron field emission and its stability, tip surface of amorphous silicon field emitters have been coated with molybdenum layer with a thickness of 25 nm through the gate opening and annealed rapidly in inert ambient. Compared with amorphous silicon field emitters, Mo silicidized amorphous silicon field emitters exhibited lower turn on voltage about 9 V, 3.8 times higher maximum current, 3.1 times lower fluctuation range and less change of the emission current depending on the vacuum level.

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