Characterization of electrophoretically deposited low voltage phosphors mixed with $In_2O_3$ conducting powders for field emission display

  • Seo, D.S. (Department of Physics, Hanyang University) ;
  • Song, B.G. (Department of Physics, Hanyang University) ;
  • Kim, C.O. (Department of Physics, Hanyang University) ;
  • Hong, J.P. (Department of Physics, Hanyang University) ;
  • Jin, Y.W. (Material and Device Research Center, Samsung Advanced Institute of Technology) ;
  • Cha, S.N. (Material and Device Research Center, Samsung Advanced Institute of Technology) ;
  • Lee, N.S. (Material and Device Research Center, Samsung Advanced Institute of Technology) ;
  • Jung, J.E. (Material and Device Research Center, Samsung Advanced Institute of Technology) ;
  • Kim, J.M. (Material and Device Research Center, Samsung Advanced Institute of Technology)
  • 발행 : 2000.01.13

초록

Primary emphasis was placed on the electrophoretic deposition of low voltage phosphor to indium-tin oxide-coated glass for the application of field emission display. The phosphor deposited by various parameters, such as deposition time and applied voltages was examined in detail. In addition, a comparison was made by analyzing luminance properties of the phosphor mixed with and without conducting $In_2O_3$ powder of less than 1um size. The measurement was performed as a function of $In_2O_3$ concentration from 3% to 15% by weight. The enhanced impact of indium powder mixing on the phosphor was clearly demonstrated by aging performance curve at 1000V excitation voltages with a current density of $1\;mA/cm^2$

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