Formation of an Aluminum Parting Layer in the Fabrication of Field Emitter Arrays Using Reflow Method

We propose a new method for the formation of an aluminum parting layer in the fabrication of field emitter arrays, in which we used a reflow property of aluminum at a lower temperature than the deformation point of glass. After the sputtered aluminum layer on the gate metal was etched for the formation of gate holes, we carried out a rapid thermal annealing process, by which the aluminum slightly diffused into the gate hole. This reflowed aluminum could be used as a parting layer and emitter arrays were easily fabricated using this method.