Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Characterization of SOI Wafers Fabricated by a Modified Direct Bonding Technology

  • Kim, E.D. (Power Semicon. Res. Group, Korea Electrotechnology Research Institute) ;
  • Kim, S.C. (Power Semicon. Res. Group, Korea Electrotechnology Research Institute) ;
  • Park, J.M. (Power Semicon. Res. Group, Korea Electrotechnology Research Institute) ;
  • Kim, N.K. (Power Semicon. Res. Group, Korea Electrotechnology Research Institute) ;
  • Kostina, L.S. (A. F. Ioffe Physico-Technical Institute, Russian Academy of Science)
  • Published : 2000.04.28
Download PDF
⟨ Previous Next ⟩

Abstract

A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

Keywords