Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

A study on the Etching and Dielectric Properties of PZT Thin Films with Excess Pb Contents

Pb 함량에 따른 PZT 박막의 식각 및 유전특성에 관한 연구

  • 김경태 (광운대학교 전자재료공학과) ;
  • 이성갑 (서남대학교 전기전자공학부) ;
  • 김창일 (중앙대학교 전기전자공학부) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 2000.04.28
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, Ferroelectric $Pb(Zr_x,Ti_{1-x})O_3$(x=0.53) thin films were fabricated by the spin-coating on the Pt/Ti/$SiO_2$/Si substrate using the PZT metal alkoxide solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar(20)$/Cl_2/BCl_3$ plasma. The etch rate of PZT film was 2450 ${\AA}/min$ at Ar(20)$/BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. The leakage current densities of before etching and after etching PZT thin film were $6.25\times10^{-8}A/cm^2$, $8.74\times10^{-7}A/cm^2$ with electric field of 0.07MV/em, respectively.

Keywords