Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of post-annealing treatment on the properties of ZnO thin films grown by PLD

PLD로 증착한 ZnO 박막의 후열처리 효과 연구

  • 배상혁 (연세대학교 전기컴퓨터 공학과) ;
  • 이상렬 (연세대학교 전기컴퓨터 공학과)
  • Published : 2000.04.22
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Abstract

ZnO thin films on silicon substrates have been deposited by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the effect of oxygen post-annealing treatment on the property of ZnO thin films, deposited film has been annealed at the substrate temperature of $440^{\circ}C$. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been characterized be improved which results in higher UV emission intensity of photoluminescence.

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