Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Minimum Pollution of Silicate Oxide in the CMP Process

CMP공정에 의한 실리케이트 산화막의 오염 최소화

  • Lee, Woo-Sun (School of Electrical and Control Measurement, Chosun University) ;
  • Kim, Sang-Yang (Anam Semiconductor) ;
  • Choi, Gun-Woo (School of Electrical and Control Measurement, Chosun University) ;
  • Cho, Jun-Ho (School of Electrical and Control Measurement, Chosun University)
  • 이우선 (조선대학교 전기제어계측공학부) ;
  • 김상용 (아남 반도체(주)) ;
  • 최권우 (조선대학교 전기제어계측공학부) ;
  • 조준호 (조선대학교 전기제어계측공학부)
  • Published : 2000.05.13
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Abstract

We have investigated the CMP slurry properties of silicate oxide thin films surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-ortho-silicate glass(PE-TEOS), $O_3$ boro-phospho silicate giass( $O_3$-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray Fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing, which is due to a CMP slurry. The polished $O_3$-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents.

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