Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Reliability of Low Temperature Poly-Si TFT employing Counter-doped Lateral Body Terminal

저온 다결정 실리콘 박막 트랜지스터의 신뢰도 향상을 위한 Counter-doped Lateral Body Terminal (CLBT) 구조

  • Kim, J.S. (School of electrical engineering, Seoul National University) ;
  • Yoo, J.S. (School of electrical engineering, Seoul National University) ;
  • Kim, C.H. (School of electrical engineering, Seoul National University) ;
  • Lee, M.C. (School of electrical engineering, Seoul National University) ;
  • Han, M.K. (School of electrical engineering, Seoul National University)
  • Published : 2001.07.18
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Abstract

A new low-temperature poly-Si TFT employing a counter-doped lateral body terminal is proposed and fabricated, in order to enhance the stability of poly-Si TFT driving circuits. The LBT structure effectively suppresses the kink effect by collecting the counter-polarity carriers and suppresses the hot carrier effect by reducing the peak lateral field at the drain junction. The proposed device is immune to dynamic stress, so that it is suitable for low voltage and high speed driving circuits of AMLCD.

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