CoCr(-Ta)/Si 이층막의 c-축 우선 배향성에 관한 연구

A Study on the c-axis preferred orientation of CoCr(-Ta)/Si doublelayer

  • 김용진 (경원대학교 전기정보공학과) ;
  • 박원효 (경원대학교 전기정보공학과) ;
  • 신성권 (동해대학교 정보통신공학과) ;
  • 손인환 (신성대학 전기과) ;
  • 최형욱 (경원대학교 전기정보공학과) ;
  • 김경환 (경원대학교 전기정보공학과)
  • 발행 : 2001.07.18

초록

In odor to set high saturation magnetization and coercivity, it had need to orient axis of easy magnetization of CoCr-based thin film perpendicular direction(c-axis) to the substrate plane. It was known that crystalline orientation of CoCr-based thin film was improved by introducing underlayer like Ti, Ge. We prepared singlelayer and double layer with Si underlayer by Facing Targets Sputtering System. As a result, intensity and c-axis dispersion angle ${\Delta}{\theta}_{50}$ of singlelayer were improved with increasing film thickness. Also, it was found that CoCr/Si and CoCrTa/Si double layer showed good c-axis dispersion angle due to introducing Si.

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