A Study on the Argon Laser Assisted Thermochemical Micro Etching

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The application of laser direct etching has been discussed, and believed that the process is a very powerful method for micro machining. This study is focused on the micro patterning technology using laser direct etching process with no chemical damage of the material surface. A new introduced concept of energy synergy effect for surface micro machining is the combination of chemically ion reaction and laser thermal process. The etchant can't etch the material in room temperature, and used Ar laser has not power enough to machine. But, the machining is occurred in local area of the material by the combined energy. Using this process, the material is especially prevented from chemical damage for electric property. We have tested this new concept, and achieved a line with $1{mu}m$ width. The Ar laser with 488nm wavelength was used. The material was Si(100) wafer, and etchant is KOH solution. The application and flexibility of this process is in great hopes for MEMS structures and fabrication of the micro electric device parts.